Electron tunneling through barriers of adjustable width: Role of the image potential and the wetting behavior of Cs by He
نویسندگان
چکیده
Photocurrents from cesium, flowing through gaseous He or He and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T=1.33 K. At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of He grows on the Cs and forms a tunnel barrier; but for He, the film is too thin to form a tunnel barrier below liquid-vapor coexistence. This is because He does not wet Cs at this temperature and the finite thickness needed to form a tunnel barrier is larger than the thickness of the thin-film state. He enables a continuously variable tunnel barrier thickness to be studied. We show that the image potential is important and confirm that an electron in liquid He has a potential energy of 1.0 eV. We find that the thickness d of a helium film is given by C3 /d=−kBT ln p /p0 for films thicker than approximately three monolayers.
منابع مشابه
Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملدینامیک سالیتونهای مدل 6 φ در یک پتانسیل خارجی
In this paper, we study particle aspects of the φ6 kinks in an external potential. The external potential is implemented by breaking the translational invariance of the system. The dynamics of the kink is calculated for the simple harmonic oscillator (SHO) and barrier potentials. The periodic motion of the kink in the SHO case is compared to the corresponding ordinary (classical) motion. It i...
متن کاملThe Role of Partial Internal Wetting in Hysteresis Behavior of Catalyst Pellet
The phenomenon of capillary condensation is studied through the weight change of condensed phase in an internally wetted porous pd catalyst pellet during the course of exothermic reacation of cyclohexane hydrogenation in a thermogravimetric analyzer (TGA). The direct measurement of condensed phase indicates that evaporation of condensed phase is confined to the macropores of catalyst pellet at ...
متن کاملDetermination of settlement trough width and optimization of soil behavior parameters based on the design of experiment method (DOE)
The expansion of the settlement trough is an important factor in the risk assessment of the tunneling induced settlement. The increase of settlement trough requires buildings to be included in the impact zone, which causes damages. This paper conducts estimation of the settlement trough width (STW) using empirical approaches, field measurement data and numerical solutions. The credibility of th...
متن کامل